Description: α-phase nano-silicon nitride is the best third-generation semiconductor ceramic substrate due to its excellent thermodynamic and mechanical properties such as high hardness, high thermal conductivity, high insulation, high temperature resistance to oxidation and strong thermal shock resistance. raw material. Especially in the field of high-power, high-voltage, and high-current IGBT (insulated gate bipolar transistor) power modules, silicon nitride has the best overall performance.
Application: The third-generation semiconductor ceramic substrate in the 5G era is the first driving force for α-phase nano-silicon nitride. In the 5G era, the heating power of various components has increased significantly, and ceramic substrates must be used for heat dissipation. Silicon nitride has high thermal conductivity and high current load characteristics, making it the most promising material overall. The direct downstream includes major ceramic substrate factories, and the indirect downstream includes major circuit board companies that process ceramic substrates.
Product performance parameters: This process is based on a new and original process, which can produce high-performance nano-silicon nitride materials on a large scale (above ten tons) at low cost and with a simple process.
