BBO Q-Switch
Aperture: 3.7mm
Crystal Size: 4x4x20mm³ (pair)
Case Size: Dia.20x55mm³
λ/4 Voltage (@ 1064 nm): 2.4kV
Capacitance: 7pF
Transmittance: >99%
Extinction Ratio: >500:1
Operating Wavelength: 1030nm-1064nm
Damage Threshold: 600MW/cm² (10ns 10Hz 1064nm)
Compared to traditional KD*P electro-optic modulation crystals, BBO (barium metaborate β-BaB2O4) crystals offer advantages such as extremely low absorption coefficients, weak piezoelectric ringing effects, and a wider spectral transmission range (210-2000 nm). Compared to RTP electro-optic modulation crystals, BBO crystals exhibit higher extinction ratios, damage thresholds, and temperature adaptability, which are beneficial for improving the stability of laser output power.
Therefore, electro-optic Q-switches made from BBO crystals are commonly used in high-repetition-rate (1 MHz), high-power (up to 1000 W) electro-optic Q-switched solid-state lasers, cavity-inverted Q-switched lasers, and all-solid-state picosecond and femtosecond regenerative amplification laser systems. We also provide matching modulation, Q-switching, selection, and regenerative amplification drive power supplies. Because the turn-off time of an electro-optic Q-switch (<4ns) is much shorter than that of an acousto-optic Q-switch (<100ns), an all-solid-state short-cavity Q-switched laser using a BBO electro-optic Q-switch can generate high-energy lasers with pulse widths less than 4ns, making it the preferred light source for electro-optic engraving machines. Without water cooling, the BBO electro-optic Q-switch can be turned off and withstand intracavity oscillating optical power up to 150W (laser output power up to 50W).
The disadvantages of BBO crystals are their small electro-optic coefficient and relatively high half-wave voltage. Therefore, the half-wave and quarter-wave voltages can be reduced by increasing the crystal length, reducing the electrode spacing, and using two BBO crystals in series.
